參數(shù)資料
型號: BYG10D
廠商: Vishay Intertechnology,Inc.
英文描述: Silicon Mesa SMD Rectifier
中文描述: 貼片整流硅梅薩
文件頁數(shù): 1/5頁
文件大小: 59K
代理商: BYG10D
BYG10
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 24-Jun-98
1 (5)
Document Number 86008
Silicon Mesa SMD Rectifier
Features
Controlled avalanche characteristics
Glass passivated junction
Low reverse current
High surge current capability
Wave and reflow solderable
Applications
Surface mounting
General purpose rectifier
15 811
Absolute Maximum Ratings
T
j
= 25 C
Parameter
Reverse voltage
=Repetitive peak reverse voltage
Test Conditions
Type
BYG10D
BYG10G
BYG10J
BYG10K
BYG10M
Symbol
V
R
=V
RRM
V
R
=V
RRM
V
R
=V
RRM
V
R
=V
RRM
V
R
=V
RRM
I
FSM
Value
200
400
600
800
1000
30
Unit
V
V
V
V
V
A
Peak forward surge current
t
p
=10ms,
half sinewave
Average forward current
Junction and storage
temperature range
Pulse energy in avalanche mode,
non repetitive
(inductive load switch off)
I
FAV
T
j
=T
stg
1.5
A
C
–55...+150
I
(BR)R
=1A, T
j
=25 C
E
R
20
mJ
Maximum Thermal Resistance
T
j
= 25 C
Parameter
Junction lead
T
L
=const.
Junction ambient
mounted on epoxy–glass hard tissue
mounted on epoxy–glass hard tissue, 50mm
2
35 m Cu
mounted on Al–oxid–ceramic (Al
2
O
3
), 50mm
2
35 m Cu
Test Conditions
Symbol
R
thJL
R
thJA
R
thJA
R
thJA
Value
25
150
125
100
Unit
K/W
K/W
K/W
K/W
相關PDF資料
PDF描述
BYG10G Silicon Mesa SMD Rectifier
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BYG10M Silicon Mesa SMD Rectifier
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