參數(shù)資料
型號(hào): BYD73D
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: RP40 (GW) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 15V; 4:1 Wide Input Voltage Range; 40 Watts Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 55??C; Standard 2? x2? Package and Pinning; Efficiency to 86%
中文描述: 1 A, 200 V, SILICON, SIGNAL DIODE
封裝: HERMETIC SEALED, GLASS PACKAGE-2
文件頁(yè)數(shù): 3/11頁(yè)
文件大?。?/td> 63K
代理商: BYD73D
1996 Sep 18
3
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
I
FRM
repetitive peak forward current
BYD73A to D
BYD73E to G
repetitive peak forward current
BYD73A to D
BYD73E to G
non-repetitive peak forward current
T
tp
= 55
°
C; see Figs 6 and 7
14
15
A
A
I
FRM
T
amb
= 60
°
C; see Figs 8 and 9
8.5
9.5
A
A
A
I
FSM
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
25
E
RSM
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
10
mJ
T
stg
T
j
65
65
+175
+175
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
BYD73A to D
BYD73E to G
forward voltage
BYD73A to D
BYD73E to G
reverse avalanche breakdown
voltage
BYD73A
BYD73B
BYD73C
BYD73D
BYD73E
BYD73F
BYD73G
reverse current
I
F
= 1 A; T
j
= T
j max
;
see Figs 12 and 13
0.75
0.83
V
V
V
F
I
F
= 1 A;
see Figs 12 and 13
0.98
1.05
V
V
V
(BR)R
I
R
= 0.1 mA
55
110
165
220
275
330
440
V
V
V
V
V
V
V
μ
A
I
R
V
R
= V
RRMmax
;
see Fig.14
V
R
= V
RRMmax
;
T
j
= 165
°
C; see Fig.14
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A;
see Fig.18
1
100
μ
A
t
rr
reverse recovery time
BYD73A to D
BYD73E to G
25
50
ns
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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