參數(shù)資料
型號(hào): BYD57G
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Fast soft-recovery controlled avalanche rectifiers(快速軟恢復(fù)控制的雪崩整流器)
中文描述: 0.4 A, 400 V, SILICON, SIGNAL DIODE
封裝: HERMETIC SEALED, GLASS, SOD-87, 2 PIN
文件頁(yè)數(shù): 3/12頁(yè)
文件大?。?/td> 77K
代理商: BYD57G
1999 Nov 11
3
Philips Semiconductors
Product specification
Ultra-fast soft-recovery
controlled avalanche rectifiers
BYD57 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
I
FRM
repetitive peak forward current
BYD57D to M
BYD57U and V
non-repetitive peak forward current
T
amb
= 60
°
C; see Figs 8 and 9
3.0
3.7
5.0
A
A
A
I
FSM
t = 10 ms half sinewave; T
j
= 25
°
C
prior to surge; V
R
= V
RRMmax
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
E
RSM
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
10
mJ
T
stg
T
j
65
65
+175
+175
°
C
°
C
see Fig.12
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
BYD57D to M
BYD57U and V
forward voltage
BYD57D to M
BYD57U and V
reverse avalanche breakdown
voltage
BYD57D
BYD57G
BYD57J
BYD57K
BYD57M
BYD57U
BYD57V
reverse current
I
F
= 1 A; T
j
= T
j max
;
see Figs 13 and 14
2.1
1.7
V
V
V
F
I
F
= 1 A;
see Figs 13 and 14
3.6
2.3
V
V
V
(BR)R
I
R
= 0.1 mA
300
500
700
900
1100
1300
1500
V
V
V
V
V
V
V
μ
A
I
R
V
R
= V
RRMmax
;
see Fig.15
V
R
= V
RRMmax
;
T
j
= 165
°
C; see Fig.15
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A;
see Fig.18
5
100
μ
A
t
rr
reverse recovery time
BYD57D to J
BYD57K and M
BYD57U and V
diode capacitance
30
75
ns
ns
ns
pF
150
C
d
f = 1 MHz; V
R
= 0;
see Fig.16
20
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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