參數(shù)資料
型號(hào): BYD53K
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Fast soft-recovery controlled avalanche rectifiers(快速軟恢復(fù)控制的雪崩整流器)
中文描述: 0.4 A, 800 V, SILICON, SIGNAL DIODE
封裝: HERMETIC SEALED, GLASS PACKAGE-2
文件頁數(shù): 3/12頁
文件大小: 81K
代理商: BYD53K
1998 Dec 04
3
Philips Semiconductors
Product specification
Fast soft-recovery controlled
avalanche rectifiers
BYD53 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
I
FRM
repetitive peak forward current
BYD53D to M
BYD53U and V
non-repetitive peak forward current
T
amb
= 65
°
C; see Figs 8 and 9
3.6
4.45
A
A
A
I
FSM
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
5
E
RSM
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
10
mJ
T
stg
T
j
65
65
+175
+175
°
C
°
C
see Fig.12
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
BYD53D to M
BYD53U and V
forward voltage
BYD53D to M
BYD53U and V
reverse avalanche
breakdown voltage
BYD53D
BYD53G
BYD53J
BYD53K
BYD53M
BYD53U
BYD53V
reverse current
I
F
= 1 A; T
j
= T
j max
;
see Figs 13 and 14
2.1
1.7
V
V
V
F
I
F
= 1 A; see Figs 13 and 14
3.6
2.3
V
V
V
(BR)R
I
R
= 0.1 mA
300
500
700
900
1100
1300
1500
V
V
V
V
V
V
V
μ
A
μ
A
I
R
V
R
= V
RRMmax
; see Fig.15
V
R
= V
RRMmax
; T
j
= 165
°
C;
see Fig.15
when switched from I
F
= 0.5 A
to I
R
= 1 A; measured at
I
R
= 0.25 A; see Fig.18
1
100
t
rr
reverse recovery time
BYD53D to J
BYD53K and M
BYD53U and V
diode capacitance
30
75
ns
ns
ns
pF
150
C
d
f = 1 MHz; V
R
= 0; see Fig.16
20
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
相關(guān)PDF資料
PDF描述
BYD53M Fast soft-recovery controlled avalanche rectifiers(快速軟恢復(fù)控制的雪崩整流器)
BYD53U Fast soft-recovery controlled avalanche rectifiers(快速軟恢復(fù)控制的雪崩整流器)
BYD53V Fast soft-recovery controlled avalanche rectifiers(快速軟恢復(fù)控制的雪崩整流器)
BYD53D Fast soft-recovery controlled avalanche rectifiers(快速軟恢復(fù)控制的雪崩整流器)
BYD53SERIES 1.5 A max constant current LED driver
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