參數(shù)資料
型號(hào): BYD47-20
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Fast soft-recovery controlled avalanche rectifiers
中文描述: 0.34 A, 2000 V, SILICON, SIGNAL DIODE
封裝: HERMETICAL SEALED, GLASS PACKAGE-2
文件頁(yè)數(shù): 3/12頁(yè)
文件大?。?/td> 66K
代理商: BYD47-20
1999 Nov 11
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD47 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
40
μ
m, see Fig.11.
For more information please refer to the “General Part of associated Handbook”.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 1 A; T
j
= T
j max
; see Fig.8
I
F
= 1 A; see Fig.8
V
R
= V
RRMmax
;
see Fig.9
V
R
= V
RRMmax
; T
j
= 125
°
C;
see Fig.9
when switched from I
F
= 0.5 A to
I
R
= 1 A; measured at I
R
= 0.25 A;
see Fig.12
f = 1 MHz; V
R
= 0 V; see Fig.10
when switched from I
F
= 1 A to
V
R
30 V and dI
F
/dt =
1 A/
μ
s;
see Fig.13
2.05
2.40
V
V
μ
A
I
R
reverse current
5
50
μ
A
t
rr
reverse recovery time
300
ns
C
d
dI
R
dt
diode capacitance
maximum slope of reverse recovery
current
15
pF
A/
μ
s
5
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
30
K/W
K/W
note 1
150
--------
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