參數(shù)資料
型號(hào): BYD43-18
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Fast soft-recovery rectifiers
中文描述: 0.3 A, 1800 V, SILICON, SIGNAL DIODE
封裝: HERMETIC SEALED, GLASS, SOD-81, 2 PIN
文件頁(yè)數(shù): 3/11頁(yè)
文件大?。?/td> 67K
代理商: BYD43-18
1996 Jun 05
3
Philips Semiconductors
Product specification
Fast soft-recovery rectifiers
BYD43 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
40
μ
m, see Fig.20.
For more information please refer to the “General Part of associated Handbook”
I
FSM
non-repetitive peak forward current
BYD43U and V
BYD43-16 to 20
storage temperature
junction temperature
t = 10 ms half sinewave; T
j
= T
j max
prior to surge; V
R
= V
RRMmax
6
6
A
A
°
C
°
C
T
stg
T
j
65
65
+175
+175
see Figs 12 and 13
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
BYD43U and V
BYD43-16 to 20
forward voltage
BYD43U and V
BYD43-16 to 20
reverse current
BYD43U and V
BYD43-16 to 20
reverse current
BYD43U and V
BYD43-16 to 20
reverse recovery time
BYD43U and V
BYD43-16 to 20
I
F
= 1 A; T
j
= T
j max
;
see Figs 14 and 15
1.20
2.05
V
V
V
F
I
F
= 1 A;
see Figs 14 and 15
1.5
2.4
V
V
I
R
V
R
= V
RRMmax
;
see Figs 16 and 17
1
5
μ
A
μ
A
I
R
V
R
= V
RRMmax
T
j
= 165
°
C; see Fig 16
T
j
= 125
°
C; see Fig 17
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A;
see Fig 22
f = 1 MHz; V
R
= 0 V;
see Figs 18 and 19
100
50
μ
A
μ
A
t
rr
250
300
ns
ns
C
d
diode capacitance
BYD43U and V
BYD43-16 to 20
maximum slope of reverse recovery
current
BYD43U and V
BYD43-16 to 20
20
15
pF
pF
when switched from
I
F
= 1 A to V
R
30 V
and dI
F
/dt =
1 A/
μ
s;
see Fig.21
5
5
A/
μ
s
A/
μ
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
60
K/W
K/W
120
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
dI
R
dt
--------
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