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參數(shù)資料
| 型號： | BYD37M |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Fast soft-recovery controlled avalanche rectifiers |
| 中文描述： | 0.6 A, 1000 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 65K |
| 代理商： | BYD37M |
1999 Nov 16
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD37 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥
40
μ
m, see Fig.11.
For more information please refer to the “General Part of associated Handbook”
E
RSM
non-repetitive peak reverse
avalanche energy
BYD37D to J
BYD37K and M
storage temperature
junction temperature
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
10
mJ
mJ
°
C
°
C
7
T
stg
T
j
65
65
+175
+175
see Fig.7
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 1 A; T
j
= T
j max
;
see Fig.8
I
F
= 1 A;
see Fig.8
I
R
= 0.1 mA
1.1
V
1.3
V
V
(BR)R
reverse avalanche breakdown
voltage
BYD37D
BYD37G
BYD37J
BYD37K
BYD37M
reverse current
300
500
700
900
1100
V
V
V
V
V
μ
A
μ
A
I
R
V
R
= V
RRMmax
; see Fig.9
V
R
= V
RRMmax
;
T
j
= 165
°
C; see Fig.9
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25A;
see Fig.12
f = 1 MHz; V
R
= 0;
see Fig.10
when switched from
I
F
= 1 A to V
R
≥
30 V and
dI
F
/dt =
1 A/
μ
s;
see Fig.13
1
100
t
rr
reverse recovery time
BYD37D to J
BYD37K and M
250
300
ns
ns
C
d
diode capacitance
20
pF
maximum slope of reverse recovery
current
BYD37D to J
BYD37K and M
6
5
A/
μ
s
A/
μ
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
30
K/W
K/W
note 1
150
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
dI
R
dt
--------
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