參數(shù)資料
型號: BYD31M
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Fast soft-recovery controlled avalanche rectifiers
中文描述: 0.32 A, 1000 V, SILICON, SIGNAL DIODE
文件頁數(shù): 2/9頁
文件大?。?/td> 59K
代理商: BYD31M
1996 Sep 18
2
Not recommended for new designs
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD31 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
(1)
technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD91) and symbol.
MAM196
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
BYD31D
BYD31G
BYD31J
BYD31K
BYD31M
continuous reverse voltage
BYD31D
BYD31G
BYD31J
BYD31K
BYD31M
average forward current
200
400
600
800
1000
V
V
V
V
V
V
R
200
400
600
800
1000
440
V
V
V
V
V
mA
I
F(AV)
T
tp
= 55
°
C; lead length = 10 mm;
see Fig.2; averaged over any
20 ms period;
see also Fig.6
T
amb
= 60
°
C; PCB mounting (see
Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6
T
tp
= 55
°
C; see Fig.4
T
amb
= 60
°
C; see Fig.5
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
320
mA
I
FRM
repetitive peak forward current
4
3
5
A
A
A
I
FSM
non-repetitive peak forward current
相關(guān)PDF資料
PDF描述
BYD32G Fast soft-recovery controlled avalanche rectifiers(快速軟恢復(fù)控制的雪崩整流器)
BYD32J Fast soft-recovery controlled avalanche rectifiers
BYD32D Fast soft-recovery controlled avalanche rectifiers(快速軟恢復(fù)控制的雪崩整流器)
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BYD32G 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Fast soft-recovery controlled avalanche rectifiers
BYD32J 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Fast soft-recovery controlled avalanche rectifiers