參數(shù)資料
型號: BYD31K
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Fast soft-recovery controlled avalanche rectifiers
中文描述: 0.32 A, 800 V, SILICON, SIGNAL DIODE
文件頁數(shù): 3/9頁
文件大小: 59K
代理商: BYD31K
1996 Sep 18
3
Not recommended for new designs
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD31 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
P
RSM
non-repetitive peak reverse power
dissipation
BYD31D to J
BYD31K and M
storage temperature
junction temperature
t = 20
μ
s half sine wave; T
j
= T
j max
prior to surge
100
50
+175
+175
W
W
°
C
°
C
T
stg
T
j
65
65
see Fig.7
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 0.5 A; T
j
= T
j max
;
see Fig.8
I
F
= 0.5 A;
see Fig.8
I
R
= 0.1 mA
1.15
V
1.35
V
V
(BR)R
reverse avalanche breakdown
voltage
BYD31D
BYD31G
BYD31J
BYD31K
BYD31M
reverse current
300
500
700
900
1100
V
V
V
V
V
μ
A
I
R
V
R
= V
RRMmax
;
see Fig.9
V
R
= V
RRMmax
;
T
j
= 165
°
C; see Fig.9
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25A
see Fig.12
f = 1 MHz; V
R
= 0 V;
see Fig.10
when switched from
I
F
= 1 A to V
R
30 V
and dI
F
/dt =
1 A/
μ
s;
see Fig.13
1
75
μ
A
t
rr
reverse recovery time
BYD31D to J
BYD31K and M
250
300
ns
ns
C
d
diode capacitance
9
pF
maximum slope of reverse recovery
current
BYD31D to J
BYD31K and M
6
5
A/
μ
s
A/
μ
s
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
dI
R
dt
--------
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