參數(shù)資料
型號(hào): BYD31D
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: RES NET BUSSED 47K OHM 8-SIP
中文描述: 0.32 A, 200 V, SILICON, SIGNAL DIODE
文件頁(yè)數(shù): 6/9頁(yè)
文件大?。?/td> 59K
代理商: BYD31D
1996 Sep 18
6
Not recommended for new designs
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD31 series
T
amb
= 60
°
C; R
th j-a
= 250 K/W.
V
RRMmax
during 1
δ
; curves include derating for T
j max
at V
RRM
= 1000 V.
Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
MCD586
10
1
10
0
10
1
10
2
10
3
10
4
tp (ms)
10
2
(A)
IFRM
1
0
2
3
δ =
0.05
0.2
0.5
0.1
1
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
δ
= 0.5.
Fig.6
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
handbook, halfpage
0
0.25
0.50
0
0.5
MCD584
IF(AV)(A)
(W)
P
a = 3
a = 1.57
1.42
2.5
2
Solid line = V
R
.
Dotted line = V
RRM
;
δ
= 0.5.
Fig.7
Maximum permissible junction temperature
as a function of reverse voltage.
handbook, halfpage
0
500
1000
0
100
MCD583
VR(V)
(o
j
D
G
J
K
M
相關(guān)PDF資料
PDF描述
BYD31G Fast soft-recovery controlled avalanche rectifiers
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BYD31K Fast soft-recovery controlled avalanche rectifiers
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