參數(shù)資料
型號: BYD17
廠商: NXP Semiconductors N.V.
英文描述: General purpose controlled avalanche rectifiers
中文描述: 通用控制雪崩整流器
文件頁數(shù): 3/8頁
文件大?。?/td> 54K
代理商: BYD17
1999 Nov 11
3
Philips Semiconductors
Product specification
General purpose
controlled avalanche rectifiers
BYD17 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
40
μ
m, see Fig.9.
For more information please refer to the “General Part of associated Handbook”
I
F(AV)
average forward current
T
tp
= 105
°
C;
averaged over any 20 ms period;
see Figs 2 and 4
T
amb
= 65
°
C; PCB mounting (see
Fig.9);
averaged over any 20 ms period;
see Figs 3 and 4
t = 10 ms half sinewave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
1.5
A
0.6
A
I
FSM
non-repetitive peak forward current
20
A
E
RSM
non-repetitive peak reverse avalanche
energy
storage temperature
junction temperature
7
mJ
T
stg
T
j
65
65
+175
+175
°
C
°
C
see Fig.5
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 1 A; T
j
= T
j max;
see Fig.6
I
F
= 1 A; see Fig.6
I
R
= 0.1 mA
0.93
1.05
V
V
V
(BR)R
reverse avalanche
breakdown voltage
BYD17D
BYD17G
BYD17J
BYD17K
BYD17M
reverse current
225
450
650
900
1100
1
V
V
V
V
V
μ
A
μ
A
μ
s
I
R
V
R
= V
RRMmax
; see Fig.7
V
R
= V
RRMmax
; T
j
= 165
°
C; see Fig.7
when switched from I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A; see Fig.10
V
R
= 0 V; f = 1 MHz; see Fig.8
100
t
rr
reverse recovery time
3
C
d
diode capacitance
21
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
30
K/W
K/W
note 1
150
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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