- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369592 > BYD13 (NXP Semiconductors N.V.) Controlled avalanche rectifiers PDF資料下載
參數(shù)資料
| 型號(hào)： | BYD13 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Controlled avalanche rectifiers |
| 中文描述： | 控制雪崩整流器 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 39K |
| 代理商： | BYD13 |
1996 May 24
3
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD13 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥
40
μ
m, see Fig.9.
For more information please refer to the “General Part of associated Handbook”
I
F(AV)
average forward current
T
tp
= 55
°
C; lead length = 10 mm;
averaged over any 20 ms period;
see Figs 2 and 4
T
amb
= 65
°
C; PCB mounting
(see Fig.9);
averaged over any 20 ms period;
see Figs 3 and 4
t = 10 ms half sinewave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
1.40
A
0.75
A
I
FSM
non-repetitive peak forward current
20
A
E
RSM
non-repetitive peak reverse
avalanche energy
storage temperature
7
mJ
T
stg
T
j
65
65
+175
°
C
°
C
junction temperature
see Fig.5
+175
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 1 A; T
j
= T
j max;
see Fig.6
I
F
= 1 A; see Fig.6
I
R
= 0.1 mA
0.93
1.05
V
V
V
(BR)R
reverse avalanche
breakdown voltage
BYD13D
BYD13G
BYD13J
BYD13K
BYD13M
reverse current
225
450
650
900
1100
1
V
V
V
V
V
μ
A
μ
A
μ
s
I
R
V
R
= V
RRMmax
; see Fig.7
V
R
= V
RRMmax
; T
j
= 165
°
C; see Fig.7
100
t
rr
reverse recovery time when switched from I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A; see Fig.10
diode capacitance
V
R
= 0 V; f = 1 MHz; see Fig.8
3
C
d
21
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
60
K/W
K/W
120
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BYD13D | Controlled avalanche rectifiers |
| BYD13G | Controlled avalanche rectifiers |
| BYD13J | Controlled avalanche rectifiers |
| BYD13K | Controlled avalanche rectifiers |
| BYD13M | Controlled avalanche rectifiers |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BYD13D | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Controlled avalanche rectifiers |
| BYD13DGP/51 | 功能描述:整流器 1.0 Amp 200 Volt RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| BYD13DGP/54 | 功能描述:整流器 1.0 Amp 200 Volt RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| BYD13DGP/73 | 功能描述:整流器 1.0 Amp 200 Volt RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| BYD13DGP-E3/51 | 功能描述:整流器 1.0 Amp 200 Volt RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。