參數(shù)資料
型號(hào): BYD12D
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Controlled avalanche rectifiers
中文描述: 0.82 A, 200 V, SILICON, SIGNAL DIODE
文件頁數(shù): 4/8頁
文件大?。?/td> 49K
代理商: BYD12D
1998 Dec 03
4
Philips Semiconductors
Preliminary specification
Controlled avalanche rectifiers
BYD12 series
GRAPHICAL DATA
a = 1.57; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.6.
Fig.2
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
(A)
0
200
0
0.2
0.4
0.6
0.8
40
80
120
160
MDA808
Tamb (
°
C)
Solid line = V
R
.
Dotted line = V
RRM
;
δ
= 0.5.
Fig.3
Maximum permissible junction temperature
as a function of reverse voltage.
handbook, halfpage
Tj
( C)
0
D
G
J
K
M
400
800
1200
0
100
50
150
MGC736
VR, VRRM (V)
Solid line: T
j
= 25
°
C.
Dotted line: T
j
= 175
°
C.
Fig.4
Forward current as a function of forward
voltage; typical values.
handbook, halfpage
(A)
0
0.5
1
VF (V)
2
0
8
1.5
6
4
2
MDA817
Fig.5
Reverse current as a function of junction
temperature; typical values.
V
R
= V
RRMmax
.
handbook, halfpage
IR
(
μ
A)
200
0
40
80
120
160
2
10
1
10
1
10
2
MDA822
Tj (
°
C)
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