參數(shù)資料
型號(hào): BYD123
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Ultra fast low-loss rectifier
中文描述: 1 A, 200 V, SILICON, SIGNAL DIODE
封裝: HERMETIC SEALED, GLASS PACKAGE-2
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 65K
代理商: BYD123
1999 Feb 10
2
Philips Semiconductors
Product specification
Ultra fast low-loss rectifier
BYD123
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass SOD81
package through Implotec
(1)
technology. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD81) and symbol.
handbook, 4 columns
a
k
MAM123
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
V
R
I
F(AV)
repetitive peak reverse voltage
continuous reverse voltage
average forward current
200
200
1
V
V
A
T
tp
= 115
°
C; lead length = 10 mm;
averaged over any 20 ms period;
see Figs 5 and 6
t = 10 ms half sinewave;
V
R
= V
RRMmax
I
FSM
non-repetitive peak forward current
25
A
T
stg
T
j
storage temperature
junction temperature
65
65
+175
+175
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
I
F
= 1 A; see Fig.2; T
j
= 150
°
C
I
F
= 1 A; see Fig.2
V
R
= V
RRMmax
; see Fig.3
V
R
= V
RRMmax
; T
j
= 150
°
C; see Fig.3
when switched from I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A
0.8
0.93
2
50
25
V
V
μ
A
μ
A
ns
I
R
reverse current
t
rr
reverse recovery time
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