1996 Jun 11
3
Philips Semiconductors
Product specification
Controlled avalanche rectifier
BY527
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
40
μ
m, see Fig.9.
For more information please refer to the “General Part of associated Handbook”
SYMBOL
PARAMETER
CONDITIONS
MIN.
1250
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 1 A; T
j
= T
j max
; see Fig.6
I
F
= 1 A; see Fig.6
I
R
= 0.1 mA
0.8
1.0
V
V
V
V
(BR)R
reverse avalanche
breakdown voltage
reverse current
I
R
V
R
= V
RWMmax
; see Fig.7
V
R
= V
RWMmax
; T
j
= 165
°
C; see Fig.7
1
μ
A
μ
A
μ
s
150
t
rr
reverse recovery time when switched from I
F
= 0.5 A to
I
R
= 1 A; measured at I
R
= 0.25 A;
see Fig.10
diode capacitance
V
R
= 0 V; f = 1 MHz; see Fig.8
3
C
d
50
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
46
K/W
K/W
100
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