參數(shù)資料
型號: BY459F-1500
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Rectifier diode fast, high-voltage
中文描述: 1500 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC, FULL PACK-2
文件頁數(shù): 1/6頁
文件大?。?/td> 34K
代理商: BY459F-1500
Philips Semiconductors
Product specification
Rectifier diode
fast, high-voltage
BY459F-1500
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass-passivated
rectifier diode in a full pack plastic
envelope,
featuring
recovery and low forward recovery
voltage. The device is intended for
use in multi-sync monitor horizontal
deflection circuits.
double
diffused
SYMBOL
PARAMETER
MAX.
UNIT
fast
forward
V
RRM
V
F
I
FWM
I
FRM
t
fr
V
fr
Repetitive peak reverse voltage
Forward voltage
Working peak forward current
Repetitive peak forward current
Forward recovery time
Forward recovery voltage
1500
1.2
10
100
250
14
V
V
A
A
ns
V
PINNING - SOD100
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
cathode
2
anode
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
V
RSM
Non-repetitive peak reverse
voltage during flash-over of
picture tube
V
RRM
Repetitive peak reverse voltage t = 6
μ
s; f = 82kHz
V
RWM
Crest working reverse voltage
I
FWM
Working peak forward current
1
I
FRM
Repetitive peak forward current t = 100
μ
s
I
FSM
Non-repetitive peak forward
current
CONDITIONS
MIN.
-
MAX.
1500
UNIT
V
-
-
-
-
-
-
1500
1300
10
100
100
110
V
V
A
A
A
A
f = 82kHz; T
hs
127 C
t = 10 ms
t = 8.3 ms
sinusoidal; T
= 150 C prior to
surge; with reapplied V
RWM(max)
T
stg
T
j
Storage temperature
Operating junction temperature
-40
-
150
150
C
C
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from
both terminals to external
heatsink
C
isol
Capacitance from cathode to
external heatsink
CONDITIONS
R.H.
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
1500
UNIT
V
f = 1 MHz
-
12
-
pF
1
2
case
k
1
a
2
1
Including worst case forward recovery losses, see fig:5.
August 1996
1
Rev 1.200
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