參數(shù)資料
型號: BY329X
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
中文描述: 8 A, 1200 V, SILICON, RECTIFIER DIODE
文件頁數(shù): 2/6頁
文件大?。?/td> 49K
代理商: BY329X
Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
BY329X series
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
R.M.S. isolation voltage from
both terminals to external
heatsink
C
isol
Capacitance from both terminals f = 1 MHz
to external heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-hs
Thermal resistance junction to
heatsink
R
th j-a
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air.
MIN.
-
-
-
TYP.
-
-
55
MAX.
4.8
5.9
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
V
F
Forward voltage
I
R
Reverse current
CONDITIONS
I
F
= 20 A
V
R
= V
RWM
; T
j
= 125 C
MIN.
-
-
TYP.
1.5
0.1
MAX.
1.85
1.0
UNIT
V
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
t
rr
Reverse recovery time
Q
s
Reverse recovery charge
dI
R
/dt
Maximum slope of the reverse
recovery current
CONDITIONS
I
F
= 1 A; V
R
> 30 V; -dI
F
/dt = 50 A/
μ
s
I
F
= 2 A; V
R
> 30 V; -dI
F
/dt = 20 A/
μ
s
I
F
= 2 A; -dI
F
/dt = 20 A/
μ
s
MIN.
-
-
-
TYP.
125
0.5
50
MAX.
145
0.7
60
UNIT
ns
μ
C
A/
μ
s
May 1995
2
Rev 1.000
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