參數(shù)資料
型號(hào): BY228
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Damper diode
中文描述: 1650 V, SILICON, RECTIFIER DIODE
封裝: HERMETIC SEALED, GLASS PACKAGE-2
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 52K
代理商: BY228
BY228 SERIES
CLAMPER / DAMPER GLASS PASSIVATED RECTIFIER
Reverse Voltage -
1500 Volts
Forward Current -
2.5 Amperes
FEATURES
High temperature metallurgically bonded construction
Glass passivated cavity-free junction
2.5 ampere operation
at T
A
=50°C with no
thermal runaway
Typical I
R
less than 0.1
μ
A
Hermetically sealed package
Capable of meeting environmental standards of
MIL-S-19500
High temperature soldering guaranteed:
350°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
Case:
Solid glass body
Terminals:
Solder plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.04 ounce, 1.1 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
BY228
UNITS
Maximum non repetitive peak reverse voltage
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375” (9.5mm) lead length at T
A
= 50°C
Peak forward surge current 10ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage at 2.5A
Working peak forward current at T
A
=75°C
Peak repetitive forward surge current at T
A
=75°C
Maximum peak reverse current
at rated peak reverse voltage
Maximum reverse recovery time
(NOTE 1)
Maximum forward recovery time
(NOTE 2)
Typical junction capacitance
(NOTE 2)
Typical thermal resistance
(NOTE 4)
Operating junction temperature range
Storage temperature range
V
RSM
V
RRM
V
RMS
V
DC
1650
1500
1050
1500
Volts
Volts
Volts
Volts
I
(AV)
2.5
Amps
I
FSM
50.0
Amps
V
F
I
FWM
I
FRM
1.6
5.0
10.0
5.0
200
20.0
1.0
40.0
20.0
Volts
Amps
Amps
T
A
=25°C
T
J
=140°C
I
R
μ
A
t
rr
t
fr
C
J
R
Θ
JA
T
J
T
STG
μ
s
μ
s
pF
°C/W
°C
°C
-65 to +150
-65 to +200
NOTES:
(1) Measured with I
F
=1.0A, I
R
=50mA, di/dt=50mA/
μ
s
(2) Measured with I
F
=5.0A with tr=0.1
μ
s
(3) Measured at 1.0 MH
Z
and applied reverse voltage of 4.0 Volts
(4) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length,
P.C.B. mounted
4/98
PATENTED*
0.170 (4.3)
DIA.
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN
MAX.
0.300 (7.6)
1.0 (25.4)
MIN
Case Style G3
Dimensions in inches and (millimeters)
*
Brazed-lead assembly is covered by Patent No. 3,930,306
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