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參數(shù)資料
| 型號(hào)： | BY12 |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | High Voltage Si-Rectifiers |
| 中文描述： | 0.5 A, 12000 V, SILICON, SIGNAL DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 110K |
| 代理商： | BY12 |
1
) Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschludrhte in 10 mm Abstand von Gehuse auf Umgebungstemperatur gehalten werden
2
) at / bei I
FAV
, T
j
= 25 C
28.02.2002
191
BY 4 ... BY 16
High Voltage Si-Rectifiers
Si-Hochspannungs-Gleichrichter
Nominal current – Nennstrom
1 A...0.3A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
4000…16000 V
Plastic case
Kunststoffgehuse
6.3 x 21 [mm]
Weight approx. – Gewicht ca.
1.9 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Dimensions / Mae in mm
Standard packaging: bulk
Standard Lieferform ungegurtet
Maximum ratings and Characteristics
Grenz- und Kennwerte
Type
Typ
Rep. peak reverse volt.
Period. Spitzensperrspg.
V
RRM
[V]
4000
6000
8000
12000
16000
Surge peak reverse volt.
Stospitzensperrspg.
V
RSM
[V]
4000
6000
8000
12000
16000
Max. forward current
Dauergrenzstrom
I
FAV
[A]
1
)
1.0
1.0
0.5
0.5
0.3
Forward volt.
Durchlaspg
V
F
[V]
2
)
< 4.0
< 6.0
< 8.0
< 8.0
< 15.0
BY 4
BY 6
BY 8
BY 12
BY 16
Leakage current
Sperrstrom
T
j
= 25 C
T
j
= 100 C
V
R
= V
RRM
V
R
= V
RRM
I
R
I
R
< 1 A
< 25 A
Peak forward surge current, 50 Hz half sine-wave
Stostrom für eine 50 Hz Sinus-Halbwelle
T
A
= 25 C
I
FSM
100 A
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
T
j
T
S
– 50…+150 C
– 50…+150 C
Thermal resistance junction to ambient air
Wrmewiderstand Sperrschicht – umgebende Luft
R
thA
< 25 K/W
1
)
6
±
±0.05
1.2
6.3
2
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