參數(shù)資料
型號(hào): BUZ900P
英文描述: TRANSISTOR AUDIO NF LEISTUNGS MOSFET
中文描述: 晶體管音頻MOSFET的因子LEISTUNGS
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 39K
代理商: BUZ900P
MAGNA
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 2/95
BUZ900DP
BUZ901DP
Characteristic
Test Conditions
V
GS
= –10V
I
D
= 10mA
V
DS
= 0
V
DS
= 10V
V
GD
= 0
Min.
160
200
±14
0.1
Typ.
Max.
Unit
BV
DSX
Drain – Source Breakdown Voltage
BV
GSS
V
GS(OFF)
V
DS(SAT)
*
Gate – Source Breakdown Voltage
Gate – Source Cut–Off Voltage
Drain – Source Saturation Voltage
I
DSX
Drain – Source Cut–Off Current
yfs*
Forward Transfer Admittance
1.5
12
10
10
1.4
4
* Pulse Test: Pulse Width = 300
μ
s , Duty Cycle
2%.
BUZ900DP
BUZ901DP
I
G
= ±100
μ
A
I
D
= 100mA
I
D
= 16A
V
DS
= 160V
BUZ900DP
V
DS
= 200V
BUZ901DP
I
D
= 3A
V
GS
= –10V
V
DS
= 10V
V
V
V
V
mA
S
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–on Time
Turn-off Time
Test Conditions
Min.
Typ.
950
550
18
160
80
Max.
Unit
C
iss
C
oss
C
rss
t
on
t
off
V
DS
= 10V
f = 1MHz
V
DS
= 20V
I
D
= 7A
pF
ns
STATIC CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
DYNAMIC CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
50
100
150
200
250
300
0
0
25
50
75
100
125
150
T — CASE TEMPERATURE (C)
C
Derating Chart
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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