參數(shù)資料
型號： BUZ71AFI
英文描述： CFL/TL ballast driver preheat and dimming
中文描述： 晶體管220 MOSFET的ISOLIERT
文件頁數(shù)： 2/8頁
文件大小： 79K
代理商： BUZ71AFI
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case
Max
2.5
o
C/W
o
C/W
R
thj-amb
Thermal Resistance Junction-ambient
Max
62.5
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 25 V)
17
A
E
AS
50
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwisespecified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 250
μ
A
V
GS
= 0
50
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating
V
GS
=
±
20 V
T
j
= 125
o
C
1
10
μ
A
μ
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
±
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage V
DS
= V
GS
Static Drain-source On
Resistance
I
D
= 1 mA
I
D
= 9 A
2.1
3
4
V
V
GS
= 10 V
0.085
0.1
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V
I
D
= 9 A
4
7.7
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
760
100
30
pF
pF
pF
SWITCHING
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 30 V
R
GS
= 50
I
D
= 8 A
V
GS
= 10 V
20
65
70
35
ns
ns
ns
ns
BUZ71
2/8
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BUZ71AL 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
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