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參數(shù)資料
| 型號： | BUZ71 |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DC/DC變換器 |
| 英文描述： | RP30 (E) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 12V; 2:1 Wide Input Voltage Range; 30 Watts Output Power; 1.6kVDC Isolation; UL Certified; Fixed Operating Frequency; Six-Sided Continuous Shield; International Safety Standard Approvals; Standard 50.8 x40.6x10.2mm Package; Efficiency to 90% |
| 中文描述： | ? -通道50V - 0.085W - 17A條至220 STripFET]功率MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 79K |
| 代理商： | BUZ71 |
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case
Max
2.5
o
C/W
o
C/W
R
thj-amb
Thermal Resistance Junction-ambient
Max
62.5
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 25 V)
17
A
E
AS
50
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwisespecified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 250
μ
A
V
GS
= 0
50
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating
V
GS
=
±
20 V
T
j
= 125
o
C
1
10
μ
A
μ
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
±
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage V
DS
= V
GS
Static Drain-source On
Resistance
I
D
= 1 mA
I
D
= 9 A
2.1
3
4
V
V
GS
= 10 V
0.085
0.1
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V
I
D
= 9 A
4
7.7
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
760
100
30
pF
pF
pF
SWITCHING
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 30 V
R
GS
= 50
I
D
= 8 A
V
GS
= 10 V
20
65
70
35
ns
ns
ns
ns
BUZ71
2/8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUZ71_R4941 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUZ71A | 功能描述:MOSFET TO-220 N-CH 50V 30A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUZ71A_R4941 | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUZ71AFI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR TO 220 MOSFET ISOLIERT |
| BUZ71AL | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level) |
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