參數(shù)資料
型號: BUX98
廠商: 意法半導(dǎo)體
英文描述: High Power NPN Silicon Transistor(高電流NPN硅晶體管)
中文描述: 高功率NPN硅晶體管(高電流npn型硅晶體管)
文件頁數(shù): 2/4頁
文件大小: 63K
代理商: BUX98
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case
Max
0.7
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICER
Collector Cut-off
Current (RBE = 10
)
VCE = VCES
TCASE = 125
oC
1
8
A
mA
ICES
Collector Cut-off
Current (VBE = 0 )
VCE = VCES
TCASE = 125
oC
400
4
A
mA
ICEO
Collector Cut-off
Current (IB = 0)
VCE = VCEO
2mA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5 V
2
mA
VCEO(sus)
Collector-Emitter
Sustaining Voltage
IC = 200 mA
for BUX98
for BUX98A
400
450
V
VCER(sus)
Collector-Emitter
Sustaining Voltage
L = 2mH
IC = 1 A
for BUX98
for BUX98A
850
1000
V
VCE(sat)
Collector-Emitter
Saturation Voltage
for BUX98
IC = 20 A
IB = 4 A
for BUX98A
IC = 16 A
IB = 3.2 A
IC = 24 A
IB = 5 A
1.5
5
V
VBE(sat)
Base-Emitter
Saturation Voltage
for BUX98
IC = 20 A
IB = 4 A
for BUX98A
IC = 16 A
IB = 3.2 A
1.6
V
ton
Turn-on Time
for BUX98
1
s
ts
Storage Time
VCC = 150 V
IC = 20 A
3
s
tf
Fall Time
IB1 = - IB2 = 4 A
0.8
s
ton
Turn-on Time
for BUX98A
1
s
ts
Storage Time
VCC = 150 V
IC = 16 A
3
s
tf
Fall Time
IB1 = - IB2 = 3.2 A
0.8
s
Pulsed: Pulse duration = 300 s, duty cycle = 1.5 %
BUX98 / BUX98A
2/4
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