參數(shù)資料
型號: BUX84
廠商: Transys Electronics Ltd.
英文描述: NPN SILICON POWER TRANSISTOR
中文描述: NPN硅功率晶體管
文件頁數(shù): 2/3頁
文件大?。?/td> 25K
代理商: BUX84
Continental Device India Limited
Data Sheet
Page 2 of 3
Collector current
Collector current (Peak value)
Base current
Total power dissipation up to T
C
= 25°C
Junction temperature
Storage temperature
I
C
I
CM
I
B
P
tot
T
j
T
stg
max.
max.
max.
max.
max.
2.0
3.0
0.75
40
150
A
A
A
W
oC
–65 to +150
oC
THERMAL RESISTANCE
From junction to case
R
th j–c
=
3.125
°C/W
CHARACTERISTICS
T
amb
= 25°C unless otherwise specified
84
84A
Collector cutoff current
V
BE
= 0; V
CE
= Rated V
CES
V
BE
= 0; V
CE
= Rated V
CES
; T
C
= 125°C
Emitter cut-off current
I
C
= 0; V
EB
= 5V
Breakdown voltages
I
C
= 100 mA; I
B
= 0
I
C
= 1 mA; V
BE
= 0
I
E
= 1 mA; I
C
= 0
Saturation voltages
I
C
= 0.3 A; I
B
= 30 mA
I
C
= 1 A; I
B
= 0.2 A
I
CES
I
CES
max.
max.
0.2
1.5
mA
mA
I
EBO
max.
1.0
mA
V
CEO(sus)
* min.
V
CES
V
EBO
400
800
5.0
V
V
V
min.
min.
V
CEsat
*
V
CEsat
*
V
BEsat
*
max. 1.5
max. 3.0
max.
0.8 V
1.0 V
1.1
V
D.C. current gain
I
C
= 0.1 A; V
CE
= 5 V
Transition frequency f = 1 MHz
I
C
= 0.2 A; V
CE
= 10 V
h
FE
*
min.
30
f
T
typ.
20
MHz
Switching time
I
C
= 1A; V
CC
= 250V
I
B
= 0.2A; –I
B
= 0.4A
Turn on time
Storage time
Fall time
t
on
t
s
t
f
max
max.
max.
0.5
3.5
1.4
μs
μs
μs
*Pulsed: pulse duration = 300 μs; duty cycle
2%.
BUX84, BUX84A
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