參數(shù)資料
型號: BUX48
廠商: 意法半導(dǎo)體
英文描述: High Power NPN Silicon Transistors(高功率NPN硅晶體管)
中文描述: 高功率NPN硅晶體管(高功率npn型硅晶體管)
文件頁數(shù): 2/7頁
文件大?。?/td> 61K
代理商: BUX48
THERMAL DATA
TO-3
TO-218
ISOWATT218
R
thj-case
Thermal Resistance Junction-case
Max
1
1
2.2
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off Current
(V
BE
= 0)
V
CE
= rated V
CE
V
CE
= rated V
CES
,
T
c
= 125
o
C
200
2
μ
A
mA
I
CER
Collector Cut-off Current
(R
BE
= 10
)
Emitter Cut-off Current
(I
C
= 0)
Collector-Emitter
Sustaining Voltage (I
B
= 0)
V
CE
= rated V
CER
V
CE
= rated V
CER
,
T
c
= 125
o
C
500
4
μ
A
mA
I
EBO
V
EB
= 5 V
1
mA
V
CEO(SUS)
I
C
= 200 mA
for
BUX48/X48A/V48A/V48AFI
L= 25mH
400
450
V
V
V
EBO
Emitter-Base Voltage
(I
C
= 0)
Collector-Emitter Saturation
Voltage
I
E
= 50 mA
7
30
V
V
CE(sat)
for
BUX48
I
C
= 10 A
I
C
= 15 A
I
C
= 15 A
for
BUX48A/V48A/V48AFI
I
C
= 8 A
I
C
= 12 A
I
B
= 2 A
I
B
= 4 A
I
B
= 3 A
I
B
= 1.6 A
I
B
= 2.4 A
1.5
3.5
5
1.5
5
V
V
V
V
V
V
BE(sat)
Base-Emitter Saturation
Voltage
for
BUX48
I
C
= 10 A
for
BUX48A/V48A/V48AFI
I
C
= 8 A
I
B
= 2 A
I
B
= 1.6 A
1.6
1.6
V
V
Pulsed: Pulse duration = 300
μ
s, duty cycle
2 %
RESISTIVESWITCHING TIMES
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
on
Turn-on Time
for
BUX48
V
CC
= 150 V
I
B1
= 2 A
for
BUX48A/V48A/V48AFI
V
CC
= 150 V
I
B1
= 1.6 A
I
C
= 10 A
I
C
= 8 A
1
1
μ
s
μ
s
t
s
Storage Time
for
BUX48
V
CC
= 150 V
I
B1
= - I
B2
= 2 A
for
BUX48A/V48A/V48AFI
V
CC
= 150 V
I
B1
= - I
B2
= 1.6 A
I
C
= 10 A
I
C
= 8 A
3
3
μ
s
μ
s
t
f
Fall Time
for
BUX48
V
CC
= 150 V
I
B1
= - I
B2
= 2 A
for
BUX48A/V48A/V48AFI
V
CC
= 150 V
I
B1
= - I
B2
= 1.6 A
I
C
= 10 A
I
C
= 8 A
0.8
0.8
μ
s
μ
s
BUX48/BUX48A/BUV48A/BUV48AFI
2/7
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