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參數(shù)資料
| 型號： | BUX33B |
| 英文描述： | Single channel high side driver for automotive applications |
| 中文描述： | 叩 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 32K |
| 代理商： | BUX33B |
Document Number 3246
Issue 1
BUX33
A
BUX33A
BUX33B
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter
Collector - Emitter Sustaining
Voltage
Emitter – BaseVoltage
Collector Cut-off Current
Test Conditions
Min.
Typ.
Max.
Unit
I
C
= 200mA
I
B
= 0
I
C
= 8A
V
CE
= 1000V
I
B
= 2A
V
BE
= –1.5V
T
C
= 100°C
V
BE
= -8V
I
B
= 2A
I
B
= 3A
V
CE
= 3V
V
CE
= 10V
tp= 20
μ
s
I
B1
=2A
tp= 20
μ
s
I
B2
=-2A
I
C
= 0
I
C
= 8A
I
C
= 12A
I
C
= 8A
I
C
= 0.2A
V
CC
= 240V
I
C
= 8A
V
CC
= 240V
I
C
= 8A
Emitter Cut-off Current
Collector – Emitter
Saturation Voltage
DC Current Gain
Transition Frequency
Turn–On Delay Time
Rise Time
Storage Time
Fall Time
500
1.3
0.1
1.0
2
1
4
40
60
0.1
0.45
3.0
0.4
6
15
V
V
mA
V
—
MHz
μ
s
ELECTRICAL CHARACTERISTICS BUX33B
(Tcase= 25°C unless otherwise stated)
THERMAL CHARACTERISTICS
R
θ
JC
Thermal Resistance Junction to Case
1.0
°C/W
V
CEO(sus)*
V
BE(sat)
I
CEX
I
EBO
V
CE(sat)*
h
FE*
f
T
t
d
t
r
t
s
t
f
* Pulsed: pulse duration = 300ms, duty cycle
≤
2%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUX34 | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-39 |
| BUX348A | NPN |
| BUX40S | HIGH SIDE DRIVER |
| BUY72 | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
| BUX40 | Bipolar NPN Device |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUX34 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-39 |
| BUX348 | 功能描述:兩極晶體管 - BJT NPN Fast Sw Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUX348A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN |
| BUX37 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:HIGH VOLTAGE SILICON NPN DARLINGTON |
| BUX39 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
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