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參數(shù)資料
| 型號(hào)： | BUX22 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | High Current NPN Silicon Transistor(高電流NPN硅晶體管) |
| 中文描述： | 大電流NPN硅晶體管（高電流npn型硅晶體管） |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 62K |
| 代理商： | BUX22 |
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
0.5
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= 200 V
3
mA
I
CEX
Collector Cut-off
Current
V
CE
= 300 V V
BE
= -1.5V
T
case
= 125
C
V
CE
= 300 V V
BE
= -1.5V
V
EB
= 5 V
3
12
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
V
EBO
Emitter-Base Voltage
(I
C
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
BE(sat)
Base-Emitter
Saturation Voltage
h
FE
DC Current Gain
1
mA
I
C
= 200 mA
250
V
I
E
= 50 mA
7
V
I
C
= 10 A I
B
= 1 A
I
C
= 20 A I
B
= 2.5 A
I
C
= 20 A I
B
= 2.5 A
0.2
0.32
1
1.5
V
V
1.1
1.5
V
I
C
= 10 A V
CE
= 4 V
I
C
= 20 A V
CE
= 4 V
20
10
60
I
S/b
Second Breakdown
Collector Current
V
CE
= 140 V t = 1 s
V
CE
= 20 V t = 1 s
V
CE
= 15 V I
C
= 2 A
f = 10 MHz
I
C
= 20 A I
B1
= 2.5 A
V
CC
= 100 V
I
C
= 20 A I
B1
= 2.5 A
I
B2
= - 2.5 A V
CC
= 100V
V
clamp
= 250 V
L = 500
μ
H
0.15
17.5
A
A
f
T
Transistor Frequency
10
MHz
t
on
Turn-on Time
0.22
1.3
μ
s
t
s
t
f
Storage Time
Fall Time
1.5
0.17
2
0.5
μ
s
μ
s
A
Clamped E
s/b
Collector Current
25
Pulsed: Pulse duration = 300
μ
s, duty cycle
≤
2 %
BUX22
2/4
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|---|---|
| BUX23 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 325V V(BR)CEO | 30A I(C) | TO-3 |
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| BUX24A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 20A I(C) | TO-204AA |
| BUX24S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 20A I(C) | TO-204AA |
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