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參數(shù)資料
| 型號： | BUX12 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN MULTI - EPITAXIAL POWER TRANSISTOR |
| 中文描述： | 20 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 封裝： | TO-3, 2 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 14K |
| 代理商： | BUX12 |
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
BUX12
Prelim.10/98
Parameter
Collector - Emitter Sustaining
Voltage
Emitter – BaseVoltage
Collector Cut-off Current
Test Conditions
Min.
Typ.
Max.
Unit
I
C
= 0.2mA
I
E
= 50mA
V
CE
= 200V
V
CE
= 300V
V
CE
= 300V
V
BE
= –1.5V
V
BE
= –1.5V
T
C
= 125°C
V
EB
= 5V
I
B
= 0.5A
I
B
= 1.25A
I
C
= 0
I
C
= 5A
I
C
= 10A
I
C
= 10A
I
B
= 1.25A
I
C
= 5A
I
C
= 10A
V
CE
= 30V
V
CE
= 140V
I
C
= 1A
f = 10MHz
I
C
= 10A
V
CC
= 150V
I
C
= 10A
I
B2
= –1.25A
V
CE
= 4V
V
CE
= 4V
t = 1s
t = 1s
V
CE
= 15V
I
B1
=1.25A
I
B1
=1.25A
V
CC
= 150V
Collector Cut-off Current
Emitter Cut-off Current
Collector – Emitter
Saturation Voltage
Base – Emitter
Saturation Voltage
DC Current Gain
Second Breakdown
Collector Current
Transition Frequency
Turn–On Time
Storage Time
Fall Time
250
7
1.5
1.5
6
1
1
0.22
0.5
1.5
1.23
1.5
20
10
5
0.15
60
8
0.28
1
1.45
0.23
2
0.5
V
V
mA
mA
mA
V
V
—
A
MHz
μ
s
ELECTRICAL CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
THERMAL CHARACTERISTICS
R
θ
JC
Thermal Resistance Junction to Case
1.17
°C/W
V
CEO(sus)*
V
EBO
I
CEO
I
CEX
I
EBO
V
CE(sat)*
V
BE(sat)*
h
FE*
I
S/b
f
T
t
on
t
s
t
f
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| BUX12_09 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON MULTI-EPITAXIAL NPN TRANSISTOR |
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| BUX13 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 325V V(BR)CEO | 15A I(C) | TO-204AA |
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