參數(shù)資料
型號(hào): BUW90
廠商: 意法半導(dǎo)體
英文描述: High Power NPN Silicon Transistor(高功率NPN硅晶體管)
中文描述: 高功率NPN硅晶體管(高功率npn型硅晶體管)
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 49K
代理商: BUW90
ELECTRICAL CHARACTERISTICS
(continued)
INDUCTIVE LOAD
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
t
s
t
f
t
t
t
c
Storage Time
Fall Time
Tail Time in Turn-on
Crossover Time
V
CC
= 100 V
V
BB
= -5 V
R
B
= 2.3
L
C
= 0.25 mH
I
C
= 11 A
I
B
= 1.1 A
V
clamp
= 125 V
0.75
0.08
0.02
0.15
1.4
0.2
0.05
0.3
t
s
t
f
t
t
t
c
Storage Time
Fall Time
Tail Time in Turn-on
Crossover Time
VCC = 100 V
A
V
BB
= -5 V
R
B
= 2.3
L
C
= 0.25 mH
T
j
=100
C
V
CC
= 100 V
I
C
= 11 A
V
BB
= 0
V
clamp
= 125 V
R
B
= 4.7
L
C
= 0.25 mH
I
C
= 11 A
I
B
= 1.1
V
clamp
= 125 V
0.95
0.14
0.04
0.3
1.7
0.3
0.1
0.5
t
s
t
f
t
t
Storage Time
Fall Time
Tail Time in Turn-on
I
B
= 1.1 A
1.8
0.7
0.2
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
t
s
t
f
t
t
Storage Time
Fall Time
Tail Time in Turn-on
V
CC
= 100 V
V
BB
= 0
R
B
= 4.7
L
C
= 0.25 mH
T
j
=100
o
C
duty cycle
<
2
%
I
C
= 11 A
I
B
= 1.1 A
V
clamp
= 125 V
2.5
1
0.4
Pulsed test
t
p
< 300
μ
s
Figure 1 :
Switching Times Test Circuit (resistive load).
1 Fast electronic switch
2 Non-inductive Resistor
BUW90
3/5
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