參數(shù)資料
型號(hào)： BUW89
廠商： 意法半導(dǎo)體
英文描述： High Power NPN Silicon Transistor(高功率NPN硅晶體管)
中文描述： 高功率NPN硅晶體管（高功率npn型硅晶體管）
文件頁(yè)數(shù)： 2/5頁(yè)
文件大小： 49K
代理商： BUW89
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case
Max
1.2
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CER
Collector Cut-off
Current (R
BE
= 10
)
Collector Cut-off
Current
V
CE
= V
CEV
V
CE
= V
CEV
T
c
= 100
o
C
1
5
mA
mA
I
CEV
V
CE
= V
CEV
V
CE
= V
CEV
V
BE
= -1.5V
V
BE
= - 1.5V T
C
=100
o
C
1
5
mA
mA
I
EBO
Emitter Cut-off
Current (I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
V
EB0
Emitter-base
Voltage (I
c
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 0.2A
L = 25 mH
I
E
= 50 mA
90
V
7
V
I
C
= 7.5A
I
C
= 15A
I
C
= 7.5A
I
C
= 15A
I
B
= 0.375A
I
B
= 1.5A
I
B
= 0.375A T
j
= 100
o
C
I
B
= 1.5A
T
j
= 100
o
C
0.5
0.65
0.5
0.8
0.8
0.9
0.9
1.5
V
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 15A
I
C
= 15A
I
B
= 1.5A
I
B
= 1.5A
T
j
= 100
o
C
1.4
1.45
1.7
1.8
V
V
di
c
/d
t
Rated of Rise of
on-state Collector
Current
V
CC
= 72V
R
C
=0
I
B1
=2.25A
T
j
= 25
o
C
T
j
= 100
o
C
35
30
50
45
A/
μ
s
A/
μ
s
V
CE(2
μ
s)
Collector Emitter
Dynamic Voltage
V
CC
= 72V
R
C
=4.8
I
B1
=1.5A
T
j
= 25
o
C
T
j
= 100
o
C
1.7
2
2.5
4
V
V
V
CE(4
μ
s)
Collector Emitter
Dynamic Voltage
V
CC
= 72V
R
C
=4.8
I
B1
= 1.5A
T
j
= 25
C
T
j
= 100
o
C
1
1.5
2
3
V
V
Pulsed: Pulse duration = 300
μ
s, duty cycle < 2 %
RESISTIVELOAD
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
μ
s
μ
s
μ
s
t
r
t
s
t
f
Rise Time
Storage Time
Fall Time
V
CC
= 72V
V
BB
= -5V
R
B2
= 1
I
C
= 20A
I
B1
= 2.5A
T
p
= 30
μ
s
0.55
0.55
0.12
1.1
1
0.25
INDUCTIVE LOAD
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
s
t
f
t
t
t
c
t
s
t
f
t
t
t
c
Storage Time
Fall Time
Tail Time in Turn-on
Crossover Time
V
CC
= 72V
I
C
= 15A
V
BB
= -5V
V
clamp
= 90V
I
B
= 1.5A
R
B2
= 1
.
7
0.75
0.09
0.03
0.14
1.2
0.2
0.05
0.3
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
Storage Time
Fall Time
Tail Time in Turn-on
Crossover Time
V
CC
= 72V
I
C
= 15A
V
BB
= -5V
L
C
= 0.25mH
V
clamp
= 90V
I
B
= 1.5A
R
B2
= 1
.
7
T
j
=100
o
C
0.95
0.15
0.06
0.3
1.7
0.3
0.1
0.5
BUW89
2/5
相關(guān)PDF資料
PDF描述
BUW90 High Power NPN Silicon Transistor(高功率NPN硅晶體管)
BUX12 High Current NPN Silicon Transistor(高電流NPN硅晶體管)
BUX22 High Current NPN Silicon Transistor(高電流NPN硅晶體管)
BUX48 High Power NPN Silicon Transistors(高功率NPN硅晶體管)
BUX87 High Voltage Silicon Power Transistor(高電壓硅功率晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUW96 制造商:STMicroelectronics 功能描述:
BUWEPSDWG1572237 制造商:GECO 功能描述: 制造商:General Electric Company 功能描述:
BUWEPSDWG2262957 制造商: 功能描述: 制造商:undefined 功能描述:
BU-WH2400 制造商:Cooper Bussmann 功能描述:DEMO WHIP - Bulk 制造商:COOPER BUSSMANN 功能描述:DEMO WHIP
BU-WH900-SMA 制造商:Cooper Bussmann 功能描述:DEMO WHIP ANTENNA, 4" SMA CONNECTOR - Bulk 制造商:COOPER BUSSMANN 功能描述:DEMO WHIP ANTENNA, 4 SMA CONNECTOR
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*