參數(shù)資料
型號: BUW48
廠商: 意法半導(dǎo)體
英文描述: High Power NPN Silicon Transistors(高功率NPN硅晶體管)
中文描述: 高功率NPN硅晶體管(高功率npn型硅晶體管)
文件頁數(shù): 2/4頁
文件大?。?/td> 62K
代理商: BUW48
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
1
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEX
Collector Cut-off
Current
V
CE
= V
CEX
V
BE
= -1.5V
V
CE
= V
CEX
V
BE
= -1.5V T
c
=125
o
C
1
3
mA
mA
I
EBO
Emitter Cut-off
Current (I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
I
C
= 0.2A L = 25 mH for
BUW48
for
BUW49
60
80
V
V
V
EB0
Emitter-base
Voltage (I
c
= 0)
Collector-Emitter
Saturation Voltage
I
E
= 50 mA
7
V
V
CE(sat)
I
C
= 20A I
B
= 2A for
BUW48
I
C
= 40A I
B
= 4A for
BUW49
I
C
= 15A I
B
= 1.5A for
BUW48
I
C
= 30A I
B
= 3A for
BUW49
0.6
1.4
0.5
1.2
V
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 40A I
B
= 4A for
BUW48
I
C
= 30A I
B
= 3A for
BUW49
I
C
= 1A V
CE
= 15V f = 15 MHz
2.1
2
V
V
f
T
Transition Frequency
8
MHz
RESISTIVE LOAD
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
on
t
s
t
f
t
s
t
f
Turn-on Time
Storage Time
Fall Time
for BUW48
V
CC
= 60V I
C
= 40A
I
B1
= -I
B2
= 4A
for BUW48
V
CC
= 60V I
C
= 40A
I
B1
= -I
B2
= 4A
1.2
0.6
0.17
1.5
1.1
0.25
μ
s
μ
s
μ
s
Storage Time
Fall Time
1.65
0.5
μ
s
μ
s
μ
s
μ
s
μ
s
t
on
t
s
t
f
t
s
t
f
Turn-on Time
Storage Time
Fall Time
for BUW49
V
CC
= 80V I
C
= 30A
I
B1
= -I
B2
= 4A
for BUW49
V
CC
= 80V I
C
= 30A
I
B1
= -I
B2
= 4A
0.8
0.6
0.15
1.2
1.1
0.25
Storage Time
Fall Time
1.65
0.5
μ
s
μ
s
Pulsed: Pulse duration = 300
μ
s, duty cycle < 1.5 %
BUW48 / BUW49
2/4
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUW48 制造商:TT Electronics/ Semelab 功能描述:TRANSISTOR NPN TO-247
BUW48_03 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH POWER NPN SILICON TRANSISTORS
BUW49 制造商:TT Electronics/ Semelab 功能描述:TRANSISTOR NPN TO-247
BUW49 制造商:TT Electronics/ Semelab 功能描述:TRANSISTOR NPN TO-247
BUW50 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:POWER TRANSISTORS(25A,125V,150W)