參數(shù)資料
型號: BUW13AF
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon diffused power transistors
中文描述: 15 A, 450 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, SOT-199, 3 PIN
文件頁數(shù): 6/16頁
文件大小: 105K
代理商: BUW13AF
1997 Aug 13
6
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13F; BUW13AF
Fig.4 Forward bias SOAR.
T
mb
= 25
°
C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
(1) P
tot max
and P
tot peak max
lines.
(2) Second breakdown limits (independent of temperature).
handbook, full pagewidth
MGB929
1
10
1
10
2
10
3
10
4
I
VCE (V)
10
10
1
10
2
10
2
10
4
10
3
IC
(A)
IC max
tp =
20
μ
s
1 ms
2 ms
5 ms
10 ms
20 ms
DC
ICM max
δ
= 0.01
BUW13F
BUW13AF
50
μ
s
100
μ
s
200
μ
s
500
μ
s
II
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BUW13F Silicon diffused power transistors
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相關代理商/技術參數(shù)
參數(shù)描述
BUW13AW 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors
BUW13F 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon diffused power transistors
BUW13W 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors
BUW14 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor
BUW19 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30A I(C)