參數(shù)資料
型號(hào)： BUTW92
廠(chǎng)商： 意法半導(dǎo)體
英文描述： HIGH CURRENT NPN SILICON TRANSISTOR
中文描述： 大電流NPN硅晶體管
文件頁(yè)數(shù)： 2/4頁(yè)
文件大小： 61K
代理商： BUTW92
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case MAX
0.7
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
μ
A
mA
μ
A
I
CES
Collector Cut-off
Current (V
BE
= -1.5V)
V
CE
= 450 V
VCE
= 450 V T
C
= 100
o
C
50
1
I
EBO
Emitter Cut-off Current
(I
C
= 0)
Collector-Emitter
Breakdown Voltage
(V
EB
=0)
Emitter-Base
Breakdown Voltage
(I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
=0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
BE(sat)
Base-Emitter
Saturation Voltage
h
FE
DC Current Gain
V
EB
= 5 V
50
V
CES
IC = 5 mA
500
V
V
EBO
I
E
= 50 mA
7
V
I
C
= 200 mA
250
V
I
C
= 60 A I
B
= 15 A
I
C
= 60 A I
B
= 15 A T
C
= 100
o
C
I
C
= 60 A I
B
= 15 A
I
C
= 60 A I
B
= 15 A T
C
= 100
o
C
I
C
= 60 A V
CE
= 3 V
I
C
= 60 A V
CE
= 3 V T
C
= 100
o
C
I
C
= 5 A V
CE
= 3 V
0.8
1.1
1
1.5
V
V
1.9
2
V
V
9
6
65
t
s
t
f
RESISTIVE LOAD
Storage Time
Fall Time
I
C
= 50 A V
CC
= 250 V
I
B1
= -I
B2
= 10 A
1.2
250
1.4
300
μ
s
ns
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
BUTW92
2/4
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