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參數(shù)資料
| 型號： | BUT12XI |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 8 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 59K |
| 代理商： | BUT12XI |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT12XI
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
R.M.S. isolation voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
10
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
1
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 9 V; I
= 0 A
I
= 0 A; I
C
= 100 mA;
L = 25 mH
MIN.
-
-
TYP.
-
-
MAX.
1.0
3.0
UNIT
mA
mA
I
EBO
V
Emitter cut-off current
Collector-emitter sustaining voltage
-
-
-
10
-
mA
V
450
V
CEsat
V
BEsat
h
FE
h
FE
h
FEsat
Collector-emitter saturation voltages I
C
= 5 A; I
B
= 0.86 A
Base-emitter saturation voltage
DC current gain
-
-
-
-
1.5
1.3
35
35
12.5
V
V
I
C
= 5 A; I
= 0.86 A
I
C
= 10 mA; V
= 5 V
I
C
= 1 A; V
CE
= 5 V
I
C
= 5 A; V
CE
= 1.5 V
10
14
5.8
18
20
10
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Switching times (resistive load)
t
on
Turn-on time
t
s
Turn-off storage time
t
f
Turn-off fall time
Switching times (inductive load)
CONDITIONS
I
Con
= 5.0 A; I
Bon
= -I
Boff
= 1.0 A
TYP.
MAX.
UNIT
-
-
-
1.0
4.0
0.8
μ
s
μ
s
μ
s
I
= 5.0 A; I
Bon
= 1.0 A; L
B
= 1
μ
H;
-V
BB
= 5 V; T
j
t
s
t
f
Turn-off storage time
Turn-off fall time
1.9
150
2.5
300
μ
s
ns
1
Measured with half sine-wave voltage (curve tracer).
June 1997
2
Rev 1.000
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