參數(shù)資料
型號(hào)： BUT11XI
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:Yellow; Cable/Wire MIL SPEC:MIL-W-76C Type MW; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
中文描述： 5 A, 450 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, ISOLATED TO-220, FULL PACK-3
文件頁(yè)數(shù)： 4/7頁(yè)
文件大?。?/td> 69K
代理商： BUT11XI
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11XI
Fig.7. Normalised power derating and second
breakdown curves.
Fig.8. Reverse bias safe operating area. T
j
≤
T
j max
Fig.9. Typical DC current gain.
h
FE
= f(I
C
); parameter V
CE
Fig.10. Forward bias safe operating area. T
hs
≤
25 C
(1)
(2)
I
II
III
P
max and P
peak max lines.
Second breakdown limits.
Region of permissible DC operation.
Extension for repetitive pulse operation.
Extension during turn-on in single
transistor converters provided that
R
≤
100
and t
≤
0.6
μ
s.
Mounted with heatsink compound and
30
±
5 newton force on the centre of the
envelope.
NB:
0
20
40
60
80
100
120
140
Ths / C
%
Normalised Derating
with heatsink compound
120
110
100
90
80
70
60
50
40
30
20
10
0
Ptot
1
10
100
1000
100
10
1
0.1
0.01
tp =
10 us
100 us
1 ms
10 ms
DC
IC / A
CE
ICM max
IC max
II
I
= 0.01
III
500 ms
(1)
(2)
6
5
4
3
2
1
0
0
400
800
1200
IC / A
BUT11AX
VCE / V
0.01
0.1
1
10
100
IC / A
h
BUT11AX
100
10
1
FE
1V
5V
August 1997
4
Rev 1.000
相關(guān)PDF資料
PDF描述
BY359-1500 SCREWDRIVER, SENSO PH NO.1 X 80SCREWDRIVER, SENSO PH NO.1 X 80; Tip type:Phillips; Length, blade:80mm; Driver type:Phillips No 1; Handle type:COLOUR CODED; Tip Size:No.1
BY359-1500S SCREWDRIVER, SENSO POZI NO.0 X 60SCREWDRIVER, SENSO POZI NO.0 X 60; Tip type:Pozidriv; Length, blade:60mm; Driver type:Pozidriv No 0; Handle type:COLOUR CODED; Tip Size:No.0
BY428 PUBLICATIONS, BOOKS RoHS Compliant: NA
BY448 Damper diode
BY448 Silicon Mesa Rectifiers
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUT12 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor
BUT12A 功能描述:兩極晶體管 - BJT NPN Sil Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUT12A/B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR HOCHSPANNUNG BIPOLAR
BUT12AF 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon diffused power transistors
BUT12AI 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor
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