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參數(shù)資料
| 型號(hào)： | BUT100 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | High Power NPN Silicon Transistor(高功率NPN硅晶體管) |
| 中文描述： | 高功率NPN硅晶體管（高功率npn型硅晶體管） |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 63K |
| 代理商： | BUT100 |
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consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
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BUT100
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUT11A | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BUT13 | HIGH VOLTAHGE POWER SWITCH |
| BUT13P | HIGH VOLTAHGE POWER SWITCH |
| BUT13PFI | HIGH VOLTAHGE POWER SWITCH |
| BUT232V | NPN Transistor Power Module(NPN晶體管功率模塊) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUT100_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH POWER NPN SILICON TRANSISTOR |
| BUT102 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 50A I(C) | TO-3 |
| BUT11 | 功能描述:兩極晶體管 - BJT NPN Sil Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUT11/B | 制造商:NXP Semiconductors 功能描述: |
| BUT11A | 功能描述:兩極晶體管 - BJT NPN Si Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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