參數(shù)資料
型號(hào): BULD38
文件頁(yè)數(shù): 6/6頁(yè)
文件大?。?/td> 108K
代理商: BULD38
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license isgranted byimplication or otherwiseunder anypatent or patentrights ofSGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
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written approvalof SGS-THOMSON Microelectonics.
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BULD38
6/6
相關(guān)PDF資料
PDF描述
BULD38-1 TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | TO-251
BULK128D-A TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 4A I(C) | SOT-82
BULK128D-B HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BULK26D
BULK382 TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | SOT-82
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BULD38-1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | TO-251
BULD39D-1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High Voltage Fast-Switching NPN Power Transistor
BULD39DT4 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High Voltage Fast-Switching NPN Power Transistor
BULD3N7T4 功能描述:兩極晶體管 - BJT PWR BIP/S.SIGNAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BULD3P5T4 功能描述:兩極晶體管 - BJT PWR BIP/S.SIGNAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2