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參數(shù)資料
| 型號： | BULD26-1 |
| 英文描述： | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 4A I(C) | TO-251 |
| 中文描述： | 晶體管|晶體管|叩| 300V五（巴西）總裁| 4A條一（c）|至251 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 104K |
| 代理商： | BULD26-1 |
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
6.25
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
μ
A
μ
A
μ
A
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 600 V
V
CE
= 600 V
T
j
= 125
o
C
100
500
I
CEO
Collector Cut-off
Current (I
B
= 0)
Collector-Emitter
Sustaining Voltage
Emitter-Base Voltage
V
CE
= 300 V
250
V
CEO(sus)
I
C
= 100 mA
L = 25 mH
300
V
V
EBO
V
CE(sat)
I
E
= 10 mA
10
V
Collector-Emitter
Saturation Voltage
I
C
= 1 A
I
C
= 2 A
I
C
= 3 A
I
B
= 0.2 A
I
B
= 0.4 A
I
B
= 0.6 A
0.5
0.7
1
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 1 A
I
C
= 2 A
I
C
= 3 A
I
B
= 0.2 A
I
B
= 0.4 A
I
B
= 0.6 A
1.1
1.2
1.3
V
V
V
h
FE
DC Current Gain
I
C
= 10 mA
I
C
= 1 A
V
CE
= 5 V
V
CE
= 3 V
10
15
45
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 3 A
V
BE(off)
= -5 V
V
CL
= 250 V
I
B1
= 0.6 A
R
BB
= 0
L = 200
μ
H
I
B1
= 0.6 A
R
BB
= 0
L = 200
μ
H
0.8
65
1.5
130
μ
s
ns
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 3 A
V
BE(off)
= -5 V
V
CL
= 250 V
T
j
= 125
o
C
1.1
120
μ
s
ns
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
Safe Operating Areas
Derating Curves
BULD26
2/6
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