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參數(shù)資料
| 型號： | BULD138-1 |
| 英文描述： | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | TO-251 |
| 中文描述： | 晶體管|晶體管|叩| 400V五（巴西）總裁| 5A條一（c）|至251 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 229K |
| 代理商： | BULD138-1 |
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-ambient Max
3.57
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
μ
A
I
CES
Collector Cut-off
Current (V
BE
= 0)
Emitter-BaseBreakdown
Voltage (I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
BE(sat)
Base-Emitter
Saturation Voltage
h
FE
DC Current Gain
V
CE
= 1100 V
100
V
(BR)EBO
I
E
= 1 mA
12
24
V
I
C
= 100 mA
450
V
I
C
= 1 A I
B
= 200 mA
I
C
= 1 A I
B
= 200 mA T
j
= 125
o
C
I
C
= 1 A I
B
= 200 mA
0.25
0.6
1
1.5
V
V
1.5
V
I
C
= 250 mA V
CE
= 5 V
I
C
= 250 mA V
CE
= 5 V T
j
= 125
o
C
I
C
= 2 A V
CE
= 5 V
I
C
= 2 A V
CE
= 5 V T
j
= 125
o
C
20
23
6
4
38
44
10
7
80
85
18
16
t
s
t
f
RESISTIVE LOAD
Storage Time
Fall Time
I
C
= 2.5 A V
CC
= 125 V
V
BB(off)
= -5 V t
P
= 300
μ
s
I
B1
= -I
B2
= 0.5 A
(see figure 1)
L = 2 mH C = 1.8 nF
I
BR
≤
2.5A (see figure 2)
400
2
700
μ
s
ns
E
ar
Repetitive Avalanche
Energy
6
mJ
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
BULD1101ET4
2/7
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