參數(shù)資料
型號(hào)： BUL76B
廠商： SEMELAB LTD
元件分類(lèi)： 功率晶體管
英文描述： RP20 (F) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 12V; 2:1 Wide Input Voltage Range; 20 Watts Output Power; 1.6kVDC Isolation; UL Certified; Fixed Operating Frequency; Six-Sided Continuous Shield; Standard 50.8 x25.4x10.2mm Package; Efficiency to 89%
中文描述： 70 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝： TO-220, 3 PIN
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 19K
代理商： BUL76B
BUL76B
LAB
SEME
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/97
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
SEMEFAB DESIGNED AND DIFFUSED DIE
HIGH VOLTAGE
HIGH CURRENT
EFFICIENT POWER SWITCHING
Designed for use in
electronic ballast applications
FEATURES
Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
Triple Guard Rings for improved control of
high voltages.
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Collector – Base Voltage(I
E
=0)
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
C
= 0)
Continuous Collector Current
Base Current
Total Dissipation at T
case
= 25°C
Junction Temperature
Operating and Storage Temperature Range
250V
100V
10V
70A
14A
85W
150°C
–55 to +150°C
MECHANICAL DATA
Dimensions in mm
1 2 3
1
10.2
6
4.5
1.3
3.6 Dia.
1.3
1
1
0.85
2.54
0.5
2.54
Pin 1 - Base
Pin 2 - Collector
Pin 3 - Emitter
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
TO-220
相關(guān)PDF資料
PDF描述
BUP50A NPN MULTI-EPITAXIAL VERY FAST SWITCHING HIGH POWER TRANSISTOR
BUP52 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
BUP54 NPN MULTI-EPITAXIAL TRANSISTOR
BUP56 NPN MULTI-EPITAXIAL TRANSISTOR
BUR21 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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BUL791 制造商:Bourns Inc 功能描述:
BUL804 功能描述:兩極晶體管 - BJT Hi Vltg FAST SWITCH PNP Pwr TRANSISTOR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUL804_06 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:High voltage fast-switching NPN Power Transistor
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