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參數(shù)資料
| 型號： | BUL58 |
| 廠商： | TT electronics Semelab Limited |
| 英文描述： | 5 AMP SUBMINIATURE POWER RELAY |
| 中文描述： | 先進的分布式基礎(chǔ)設(shè)計的高壓高速NPN硅功率晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 22K |
| 代理商： | BUL58 |
Prelim. 7/00
BUL58BSMD
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukParameter
ELECTRICAL CHARACTERISTICS
Test Conditions
Min.
Typ.
Max.
Unit
90
180
10
10
100
100
10
100
80
60
30
25
20
50
0.2
0.6
1.5
1.1
2.0
20
44
V
m
A
m
A
m
A
—
V
V
MHz
pF
I
C
= 10mA
I
C
= 1mA
I
E
= 1mA
V
CB
= 180V
T
C
= 125°C
V
CE
= 80V
I
B
= 0
I
C
= 0
V
EB
= 9V
I
C
= 0.3A
I
C
= 3A
I
C
= 5A
T
C
= 125°C
V
CE
= 4V
V
CE
= 4V
V
CE
= 4V
T
C
= 125°C
I
B
= 0.1A
I
B
= 0.3A
I
B
= 0.6A
I
B
= 0.3A
I
B
= 0.5A
I
C
= 1A
I
C
= 3A
I
C
= 6A
I
C
= 3A
I
C
= 6A
I
C
= 0.2A
V
CB
= 20V
V
CE
= 4V
f = 1MHz
ELECTRICAL CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
Collector – Emitter Sustaining Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector Cut–Off Current
Collector Cut–Off Current
Emitter Cut–Off Current
DC Current Gain
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
Transition Frequency
Output Capacitance
* Pulse test t
p
= 300
m
s ,
d <
2%
V
CEO(sus)
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE*
V
CE(sat)*
V
BE(sat)*
f
t
C
ob
DYNAMIC CHARACTERISTICS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUL58BSMD | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| BUL63A | BJT |
| BUL65A | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7A I(C) | TO-251AA |
| BUL69 | NPN |
| BUL70A | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUL58A | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| BUL58ASMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed |
| BUL58B | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| BUL58BSMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| BUL58D | 功能描述:兩極晶體管 - BJT Hi Vltg Fast Swtchng NPN Pwr Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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