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參數(shù)資料
| 型號(hào)： | BUL54ASMD |
| 英文描述： | Advanced Distributed Base Design,High Voltage,High Speed NPN Silicon Power Transistor(高級(jí)分布式設(shè)計(jì)的高電壓,高速功率NPN硅晶體管) |
| 中文描述： | 先進(jìn)的分布式基站設(shè)計(jì)，高壓，高速NPN硅功率晶體管（高級(jí)分布式設(shè)計(jì)的高電壓，高速功率npn型硅晶體管） |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大小： | 20K |
| 代理商： | BUL54ASMD |
Parameter
ELECTRICAL CHARACTERISTICS
Test Conditions
Min.
Typ.
Max.
Unit
500
1000
10
100
10
100
10
100
20
12
5
4
40
18
8
7
0.05
0.15
0.3
0.8
0.9
0.8
0.1
0.2
0.5
1.0
1.1
1.0
20
20
35
0.8
0.08
2
0.04
0.2
4
0.1
V
m
A
m
A
m
A
—
V
V
V
MHz
pF
A
m
s
Prelim. 7/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukBUL54ASMD
I
C
= 100mA
I
C
= 1mA
I
E
= 1mA
I
B
= 0
I
E
= 0
I
C
= 0
V
CC
= 500V
V
CB
= 1000V
T
C
= 125°C
V
EB
= 5V
T
C
= 125°C
V
CE
= 4V
V
CE
= 4V
V
CE
= 4V
T
C
= 125°C
I
B
= 20mA
I
B
= 100mA
I
B
= 200mA
I
B
= 100mA
I
B
= 200mA
V
CE
= 4V
I
C
= 0
I
C
= 100mA
I
C
= 500mA
I
C
= 1A
I
C
= 100mA
I
C
= 500mA
I
C
= 1A
I
C
= 500mA
I
C
= 1A
I
C
= 500mA
I
C
= 100
m
A
f = 10MHz
V
CB
= 20V
I
E
= 0
V
CE
= 4V
f = 1MHz
V
CE
= 50V
t = 1s
V
CC
= 150V
I
B1
= 0.2A
I
C
= 1A
I
B2
= –0.4A
ELECTRICAL CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
Collector – Emitter Sustaining Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Emitter Cut–Off Current
Collector – Base Cut–Off Current
Emitter Cut–Off Current
DC Current Gain
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
Base – Emitter On Voltage
Transition Frequency
Output Capacitance
Second Breakdown Collector Current
On Time
Storage Time
Fall Time
* Pulse test t
p
= 300
m
s ,
d ￡
2%
V
CEO(sus)*
V
(BR)CBO*
V
(BR)EBO*
I
CEO*
I
CBO*
I
EBO*
h
FE*
V
CE(sat)*
V
BE(sat)*
V
BE(on)*
f
T
C
ob
I
S/B
t
on
t
s
t
f
DYNAMIC CHARACTERISTICS
SECOND BREAKDOWN
SWITCHING CHARACTERISTICS (resistive load)
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PDF描述 |
|---|---|
| BUL56BSMD | NPN Fast Switching Transistor(NPN快速轉(zhuǎn)換晶體管) |
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| BUL57PI | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 7A I(C) | SOT-186 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUL54A-TO5 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON POWER NPN TRANSISTOR |
| BUL54B | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| BUL54BFI | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| BUL54BSMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed |
| BUL55A | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
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