參數(shù)資料
型號: BUL43BBU
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 2 A, 350 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, TO-220AB, 3 PIN
文件頁數(shù): 12/59頁
文件大小: 364K
代理商: BUL43BBU
BUL43B
3–305
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
VCEO(sus)
350
Vdc
Collector Cutoff Current
(VCE = Rated VCEO, IB = 0)
ICEO
100
Adc
Collector Cutoff Current
(VCE = Rated VCES, VEB = 0)
@ TC = 25°C
@ TC = 125°C
ICES
10
200
Adc
Emitter–Cutoff Current
(VEB = 9 Vdc, IC = 0)
IEBO
100
Adc
ON CHARACTERISTICS
Base–Emitter Saturation Voltage
(IC = 2 Adc, IB = 0.5 Adc)
VBE(sat)
1.25
Vdc
Collector–Emitter Saturation Voltage
(IC = 2 Adc, IB = 0.5 Adc)
@ TC = 25°C
VCE(sat)
1
Vdc
DC Current Gain
(IC = 1 Adc, VCE = 2 Vdc)
@ TC = 25°C
hFE
8
(IC = 2 Adc, VCE = 5 Vdc)
@ TC = 25°C
6
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
fT
13
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
Cob
40
pF
Input Capacitance
(VEB = 8 V)
Cib
400
pF
SWITCHING CHARACTERISTICS: Resistive Load (D.C.
≤ 10%, Pulse Width = 20 s)
Turn–off Time
IC = 1.2 Adc, IB1 = 0.4 Adc
IB2 = 0.1 Adc
VCC = 300 Vdc
@ TC = 25°C
toff
4.7
5.8
s
Fall Time
IC = 2.5 Adc, IB1 = 0.5 Adc
IB2 = 0.5 Adc
VCC = 150 Vdc
@ TC = 25°C
tf
800
ns
相關(guān)PDF資料
PDF描述
BUS-65143-883B 2 CHANNEL(S), 1M bps, MIL-STD-1553 CONTROLLER, CQIP78
BUS-65145-883B 2 CHANNEL(S), 1M bps, MIL-STD-1553 CONTROLLER, DFP78
BUS-65142-883B 2 CHANNEL(S), 1M bps, MIL-STD-1553 CONTROLLER, CQIP78
BUS-65144-883B 2 CHANNEL(S), 1M bps, MIL-STD-1553 CONTROLLER, DFP78
BUW58 20 A, 160 V, NPN, Si, POWER TRANSISTOR, TO-3
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