參數(shù)資料
型號(hào)： BUL312FH
廠商： 意法半導(dǎo)體
英文描述： HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
中文描述： 高壓快速開(kāi)關(guān)NPN電源晶體管
文件頁(yè)數(shù)： 1/6頁(yè)
文件大小： 200K
代理商： BUL312FH
1/6
August 2002
BUL312FH
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
FULLY CHARACTERIZED AT 125 °C
LARGE R.B.S.O.A.
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
APPLICATIONS:
HORIZONTAL DEFLECTION FOR COLOR TV
SWITCH MODE POWER SUPPLIES
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using High Voltage
Multi Epitaxial Planar technology for high switching
speeds and high voltage capability.
It uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide R.B.S.O.A.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
Collector-Emitter Voltage (V
BE
= 0)
V
CEO
Collector-Emitter Voltage (I
B
= 0)
V
EBO
Emitter-Base Voltage (I
C
= 0)
I
C
Collector Current
I
CM
Collector Peak Current (t
p
< 5 ms)
I
B
Base Current
I
BM
Base Peak Current (t
p
< 5 ms)
P
tot
Total Dissipation at T
c
= 25 °C
V
isol
Insulation Withstand Voltage (RMS) from All Three
Leads to External Heatsink
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
Ordering Code
Marking
Shipment
BUL312FH
BUL312FH
Tube
Parameter
Value
Unit
1150
V
500
V
9
V
5
A
10
A
3
A
4
A
36
W
2500
V
–65 to 150
°C
150
°C
TO-220FH
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料
PDF描述
BUL382D High Voltage Fast-Switching NPN Power Transistors(高壓快速NPN功率晶體管)
BUL381D High Voltage Fast-Switching NPN Power Transistors(高壓快速NPN功率晶體管)
BUL382 High Voltage Fast-Switching NPN Power Transistor(高電壓快速開(kāi)關(guān)NPN功率晶體管)
BUL381 High Voltage Fast-Switching NPN Power Transistor(高電壓快速開(kāi)關(guān)NPN功率晶體管)
BUL39 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUL312FP 功能描述:兩極晶體管 - BJT Hi Vltg Fast Swtchng NPN Pwr Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUL381 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL381D 功能描述:兩極晶體管 - BJT NPN Hi-Volt Fast Sw RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUL381D_03 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL382 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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