參數(shù)資料
型號(hào)： BUK9728-55A
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel TrenchMOS standard level FET
中文描述： 22 A, 55 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, TO-220F, 3 PIN
文件頁數(shù)： 6/12頁
文件大小： 121K
代理商： BUK9728-55A
Philips Semiconductors
BUK9728-55A
N-channel TrenchMOS logic level FET
Product data
Rev. 02 — 10 June 2004
6 of 12
9397 750 13326
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C; I
D
= 15 A
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03na86
0
20
40
60
80
100
120
140
160
ID
0
2
4
6
8
10
VDS (V)
2.2
3
4
5
6
7
8
VGS (V) = 10
9
03na84
10
15
20
25
30
35
2
4
6
8
10
VGS (V)
RDSon
(m
)
03na87
15
20
25
30
35
40
45
50
55
0
10
20
30
40
50
60
70
80
90
ID (A)
RDSon
(m
)
5
3.2
3.4
3.6
3.8
4
VGS(V) = 3
03nc24
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
a
-60
-20
20
60
100
140
Tj (oC)
180
a
R
DSon 25 C
°
)
---------------------------
=
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