參數(shù)資料
型號： BUK9608-55A
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | TO-263AB
中文描述： 晶體管| MOSFET的| N溝道| 55V的五（巴西）直| 75A條（?。﹟對263AB
文件頁數(shù)： 10/14頁
文件大?。?/td> 327K
代理商： BUK9608-55A
Philips Semiconductors
BUK95/9608-55A
TrenchMOS logic level FET
Product data
Rev. 03 — 6 May 2002
5 of 14
9397 750 09573
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C55
-
V
Tj = 55 °C50
-
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Tj =25 °C
1
1.5
2
V
Tj = 175 °C
0.5
-
V
Tj = 55 °C
-
2.3
V
IDSS
drain-source leakage current
VDS = 55 V; VGS =0V
Tj =25 °C
-
0.05
10
A
Tj = 175 °C
-
500
A
IGSS
gate-source leakage current
VGS = ±10 V; VDS = 0 V
-
2
100
nA
RDSon
drain-source on-state
resistance
VGS =5V; ID =25A;
Tj =25 °C
-
6.8
8
m
Tj = 175 °C-
-
16
m
VGS = 4.5 V; ID =25A
-
8.5
m
VGS =10V; ID = 25 A
-
6.4
7.5
m
Dynamic characteristics
Qg(tot)
total gate charge
VGS =5V; VDD =44V;
ID =25A; Figure 14
-92
-
nC
Qgs
gate-to-source charge
-
11
-
nC
Qgd
gate-to-drain (Miller) charge
-
43
-
nC
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 12
-
4551
6021
pF
Coss
output capacitance
-
760
900
pF
Crss
reverse transfer capacitance
-
500
687
pF
td(on)
turn-on delay time
VDD = 30 V; RL = 1.2 ;
VGS =5V; RG =10
-40
-
ns
tr
rise time
-
175
-
ns
td(off)
turn-off delay time
-
280
-
ns
tf
fall time
-
167
-
ns
Ld
internal drain inductance
from drain lead 6 mm from
package to centre of die
-
4.5
-
nH
from contact screw on
mounting base to centre of
die SOT78
-
3.5
-
nH
from upper edge of drain
mounting base to centre of
die SOT404
-
2.5
-
nH
Ls
internal source inductance
from source lead to source
bond pad
-
7.5
-
nH
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相關代理商/技術參數(shù)
參數(shù)描述
BUK9608-55A /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK9608-55A,118 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK9608-55B 制造商:NXP Semiconductors 功能描述:MOSFET N CH 55V 75A SOT404
BUK9608-55B /T3 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK9608-55B,118 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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