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參數(shù)資料
| 型號(hào)： | BUK9606-55 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | TrenchMOS（TM）transistor Logic level FET(TrenchMOS（TM）晶體管邏輯電平FET) |
| 中文描述： | TrenchMOS（商標(biāo)）場(chǎng)效應(yīng)晶體管邏輯電平（TrenchMOS（商標(biāo)）晶體管邏輯電平場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 69K |
| 代理商： | BUK9606-55 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
BUK9606-55A
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode logic
level field-effect power transistor in a
plastic envelope suitable for surface
mounting. Using ’
trench
’ technology
thedevice features very low on-state
resistance. It is intended for use in
automotive and general purpose
switching applications.
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
55
75
230
175
V
A
W
C
V
GS
= 5 V
V
GS
= 10 V
6.3
5.8
m
m
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain (no connection
possible)
3
source
mb
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±
V
GS
±
V
GSM
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Non-repetitive gate-source voltage
CONDITIONS
-
R
GS
= 20 k
-
t
p
≤
50
μ
S
MIN.
-
-
-
-
MAX.
55
55
10
15
UNIT
V
V
V
V
I
D
I
D
I
DM
P
tot
T
stg
, T
j
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
-
-
-
-
-
75
75
240
230
175
A
A
A
W
C
- 55
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
TYP.
-
MAX.
0.65
UNIT
K/W
R
th j-a
Minimum footprint, FR4
board
50
-
K/W
d
g
s
1
3
mb
2
January 1999
1
Rev 1.000
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK9606-55A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Logic level FET |
| BUK9606-55A /T3 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK9606-55A,118 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK9606-55B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-channel TrenchMOSTM logic level FET |
| BUK9606-55B /T3 | 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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