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參數(shù)資料
| 型號： | BUK866-400IZ |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Insulated Gate Bipolar Transistor Protected Logic-Level IGBT |
| 中文描述： | 20 A, 500 V, N-CHANNEL IGBT |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 85K |
| 代理商： | BUK866-400IZ |
Philips Semiconductors
Product specification
Insulated Gate Bipolar Transistor
Protected Logic-Level IGBT
BUK866-400 IZ
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Protected N-channel logic-level
insulated gate bipolar power
transistor in a plastic envelope
suitable for surface mount
applications. It is intended for
automotive ignition applications, and
has integral zener diodes providing
active collector voltage clamping and
ESD protection up to 2 kV.
SYMBOL PARAMETER
MIN. TYP. MAX. UNIT
V
(CL)CER
V
CEsat
I
C
P
tot
E
CERS
Collector-emitter clamp voltage
Collector-emitter on-state voltage
Collector current (DC)
Total power dissipation
Clamped energy dissipation
350
400
500
2.2
20
100
300
V
V
A
W
mJ
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
collector
3
emitter
tab
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CE
V
CE
±
V
GE
I
C
I
C
I
CM
Collecter-emitter voltage
t
p
≤
500
μ
s
Continuous
-
T
mb
= 100 C
T
mb
= 25 C
-
500
V
Collector-emitter voltage
Gate-emitter voltage
Collector current (DC)
Collector current (DC)
Collector current (pulsed peak value, T
mb
= 25 C; t
p
≤
10 ms;
on-state)
Collector current (clamped inductive
load)
Clamped turn-off energy
(non-repetitive)
Clamped turn-off energy (repetitive)
-20
-
-
-
-
50
12
10
20
25
V
V
A
A
A
V
CE
≤
15 V
1 k
≤
R
G
≤
10 k
I
CLM
-
10
A
E
CERS
T
mb
= 25 C; I
C
= 10 A; R
G
= 1 k
;
see Figs. 23,24
T
mb
= 125 C; I
C
= 8 A; R
G
= 1 k
;
f = 50 Hz; t = 60 min.
I
E
= 1 A; f = 50 Hz
-
300
mJ
E
CERR
-
125
mJ
E
ECR
Reverse avalanche energy
(repetitive)
Total power dissipation
Storage temperature
Operating Junction Temperature
-
5
mJ
P
tot
T
stg
T
j
T
mb
= 25 C
-
-
-
125
150
150
W
C
C
-55
-40
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model
(100 pF, 1.5 k
)
MIN.
-
MAX.
2
UNIT
kV
1
3
mb
2
c
g
e
December 1996
1
Rev. 1.100
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK866-400IZT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 20A I(C) | SOT-404 |
| BUK9006-55A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel Enhancement mode field-effect power Transistor |
| BUK9107-40ATC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 75A I(D) | SOT-426 |
| BUK9107-40ATC /T3 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK9107-40ATC,118 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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