參數(shù)資料
型號(hào)： BUK78150-55
廠(chǎng)商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： CAP,2.2uF,50VDC,10-% Tol,10+% Tol
中文描述： 5.5 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, SOT-223, 4 PIN
文件頁(yè)數(shù)： 1/9頁(yè)
文件大小： 54K
代理商： BUK78150-55
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
BUK78150-55
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode logic
level field-effect power transistor in a
plastic envelope suitable for surface
mounting.Using
’trench’
technology
thedevice features very low on-state
resistance and has integral zener
diodes giving ESD protection. It is
intended for use in automotive and
general
purpose
applications.
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current
Total power dissipation
Junction temperature
Drain-source on-state
resistance
55
5.5
1.8
150
150
V
A
W
C
m
V
GS
= 10 V
switching
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
4
drain (tab)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±
V
GS
I
D
I
D
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
CONDITIONS
-
R
GS
= 20 k
-
T
= 25 C
On PCB in Fig.19
T
= 25 C
On PCB in Fig.19
T
amb
= 100 C
T
sp
= 25 C
T
= 25 C
On PCB in Fig.19
T
amb
= 25 C
-
MIN.
-
-
-
-
-
MAX.
55
55
16
5.5
2.6
UNIT
V
V
V
A
A
I
D
Drain current (DC)
-
1.6
A
I
DM
P
tot
P
tot
Drain current (pulse peak value)
Total power dissipation
Total power dissipation
-
-
-
30
8.3
1.8
A
W
W
T
stg
, T
j
Storage & operating temperature
- 55
150
C
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model
(100 pF, 1.5 k
)
MIN.
-
MAX.
2
UNIT
kV
d
g
s
4
1
2
3
January 1998
1
Rev 1.000
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK78150-55A 制造商:NXP Semiconductors 功能描述:MOSFET N CH 55V 5.5A SOT223 制造商:NXP Semiconductors 功能描述:MOSFET, N CH 55V 5.5A SOT223
BUK78150-55A /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK78150-55A T/R 功能描述:MOSFET TAPE-7 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK78150-55A,115 功能描述:MOSFET TAPE-7 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK78150-55A,135 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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