參數(shù)資料
型號: BUK7623-75A
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 53A I(D) | TO-263AB
中文描述: 晶體管| MOSFET的| N溝道| 75V的五(巴西)直|第53A條(?。﹟對263AB
文件頁數(shù): 8/15頁
文件大小: 336K
代理商: BUK7623-75A
Philips Semiconductors
BUK75/76/7E04-40A
TrenchMOS standard level FET
Product data
Rev. 02 — 7 November 2001
8 of 15
9397 750 09059
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
V
DS
= 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T
j
= 25
°
C; I
D
= 25 A
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
V
GS
= 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
03ne63
0
50
100
150
0
2
4
6
VGS (V)
ID
Tj = 175 oC
Tj = 25 oC
03ne61
0
2
4
6
8
10
0
30
60
90
120
QG (nC)
VGS
VDD = 32 V
VDD = 14 V
03ne60
0
50
100
150
200
0.0
0.5
1.0
1.5
VSD (V)
IS
Tj = 175 oC
Tj = 25 oC
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